bat81s, bat82s, bat83s document number 85512 rev. 1.8, 23-jul-10 vishay semiconductors www.vishay.com 1 94 9367 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal schottky diodes features ? integrated protection ring against static discharge ? low capacitance ? low leakage current ? low forward voltage drop ? very low switching time ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? general purpose and switching schottky barrier diode ? hf-detector ? protection circuit ? diode for low currents with a low supply voltage ? small battery charger ? power supplies ? dc/dc converter for notebooks mechanical data case: do-35 weight: approx. 125 mg cathode band color: black packaging codes/options: tr/10 k per 13" reel (52 mm tape), 50 k/box tap/10 k per ammopack (52 mm tape), 50 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation ordering code type marking remarks bat81s v r = 40 v bat81s-tr or bat81s-tap bat81s tape and reel/ammopack bat82s v r = 50 v bat82s-tr or bat82s-tap bat82s tape and reel/ammopack bat83s v r = 60 v bat83s-tr or bat83s-tap bat83s tape and reel/ammopack parameter test condition part symbol value unit reverse voltage bat81s v r 40 v bat82s v r 50 v bat83s v r 60 v forward continuous current i f 30 ma peak forward surge current t p 10 ms i fsm 500 ma repetitive peak forward current t p 1 s i frm 150 ma
www.vishay.com 2 document number 85512 rev. 1.8, 23-jul-10 bat81s, bat82s, bat83s vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit thermal resistance junction to ambient air l = 4 mm, t l = constant r thja 320 k/w junction temperature t j 125 c storage temperature range t stg - 65 to + 150 c parameter test condition symbol min. ty p. max. unit forward voltage i f = 0.1 ma v f 330 mv i f = 1 ma v f 410 mv i f = 15 ma v f 1000 mv reverse current v r = v rmax i r 200 na diode capacitance v r = 1 v, f = 1 mhz c d 1.6 pf figure 1. max. reverse power dissipation vs. junction temperature figure 2. reverse current vs. junction temperature 0 2 4 6 8 10 12 14 25 50 75 100 125 150 t j - j u nction temperat u re (c) 15794 v r = 60 v p r - re v erse po w er dissipation (m w ) r thja = 540 k/ w p r v r - limit at 100 % p r - limit at 100 % v r p r - limit at 8 0 % v r 0.1 100 1000 25 50 75 100 125 150 1 10 15795 v r = v rrm i - re v erse c u rrent (a) r t j - j u nction temperat u re (c) figure 3. forward current vs. forward voltage figure 4. diode capacitance vs. reverse voltage 0 0.5 1 1.5 2.0 i- for w ard c u rrent (ma) v f - for w ard v oltage ( v ) 15796 f t j = 25 c t j = 125 c 0.1 1 10 100 1000 0.01 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 0.1 1 10 100 v r - re v erse v oltage ( v ) 15797 c d - diode capacitance (pf) f = 1 mhz
bat81s, bat82s, bat83s document number 85512 rev. 1.8, 23-jul-10 vishay semiconductors www.vishay.com 3 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeter s (inches): do-35 94 9366 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. 0.55. (0.022) max cathode identification 1.7 (0.067) 1.5 (0.059) re v . 6 - date: 29. jan u ary 2007 doc u ment no.: 6.560-5004.02-4
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